Tsunehiro Ino

First demonstration and performance improvement of ferroelectric HfO<inf>2</inf>-based resistive switch with low operation current and intrinsic diode property

Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino et al. · 2016 · 105 citations

Materials Science, Semiconductors, Electrical Engineering +15

Direct Comparison of ZrO₂ and HfO₂ on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks

Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino et al. · Japanese Journal of Applied Physics · 2005 · 91 citations

Engineering, Direct Comparison, Ge Substrate +17

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Koyama, A. Kaneko, Tsunehiro Ino et al. · 2003 · 77 citations

Engineering, Thermal Characteristics, Silicon On Insulator +18

Dielectric Constant Behavior of Hf–O–N System

Tsunehiro Ino, Yuuichi Kamimuta, Masamichi Suzuki et al. · Japanese Journal of Applied Physics · 2006 · 35 citations

Nitrogen Concentration, Electrical Engineering, Engineering +13

Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs

Takeshi Yamaguchi, Ryosuke Iijima, Tsunehiro Ino et al. · 2003 · 34 citations

Electrical Engineering, Engineering, Physics +13