First demonstration and performance improvement of ferroelectric HfO<inf>2</inf>-based resistive switch with low operation current and intrinsic diode property

Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, +3

Materials ScienceSemiconductorsElectrical EngineeringResistive SwitchEngineering +13

Direct Comparison of ZrO₂ and HfO₂ on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks

Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, +1

Japanese Journal of Applied Physics

EngineeringDirect ComparisonGe SubstrateSemiconductor DeviceMolecular Beam Epitaxy +15

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Koyama, A. Kaneko, Tsunehiro Ino, +10

EngineeringThermal CharacteristicsSilicon On InsulatorSemiconductor DeviceNanoelectronics +16

Dielectric Constant Behavior of Hf–O–N System

Tsunehiro Ino, Yuuichi Kamimuta, Masamichi Suzuki, +2

Japanese Journal of Applied Physics

Nitrogen ConcentrationElectrical EngineeringEngineeringOptical PropertiesFilm Dielectric Constant +11

Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs

Takeshi Yamaguchi, Ryosuke Iijima, Tsunehiro Ino, +3

Electrical EngineeringEngineeringPhysicsNanotechnologyNanoelectronics +11

Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy

Yuuichi Kamimuta, M. Koike, Tsunehiro Ino, +4

Japanese Journal of Applied Physics

EngineeringSilicon On InsulatorBandgap EnergySemiconductorsElectron Spectroscopy +14

Careful examination on the asymmetric Vfb shift problem for poly-Si/HfSiON gatestack and its solution by the Hf concentration control in the dielectric near the poly-Si interface with small EOT expense

M. Koyama, Y. Kamimuta, Tsunehiro Ino

Small Eot ExpenseElectrical EngineeringEngineeringNanoelectronicsVfb Shift +8

Effect of substitution of Zn2+ for Cu2+ on the magnetic properties of La2Cu1−xZnxO4 single crystals

K. Uchinokura, Tsunehiro Ino, Ichiro Terasaki, +1

Physica B Condensed Matter

Materials ScienceMagnetismMagnetic PropertiesFerromagnetismEngineering +11

Effect of Hf-N bond on properties of thermally stable amorphous HfSiON and applicability of this material to sub-50nm technology node LSIs

M. Koike, Tsunehiro Ino, Y. Kamimuta, +6

High Thermal StabilityEngineeringChemistrySilicon On InsulatorBoron Nitride +14

Impact of specific failure mechanisms on endurance improvement for HfO<inf>2</inf>-based ferroelectric tunnel junction memory

M. Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, +6

EngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryDetailed InvestigationReliability Engineering +14