A. Kaneko

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Koyama, A. Kaneko, Tsunehiro Ino et al. · 2003 · 77 citations

Engineering, Thermal Characteristics, Silicon On Insulator +18

Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length

K. Okano, T. Izumida, H. Kawasaki et al. · 2006 · 76 citations

Electrical Engineering, Bulk Silicon Substrate, Engineering +9

High-Performance FinFET with Dopant-Segregated Schottky Source/Drain

A. Kaneko, A. Yagishita, K. Yahashi et al. · 2006 · 53 citations

Low-power Electronics, Propagation Delay Time, Electrical Engineering +10

Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm Node and Beyond

Hikaru Kawasaki, K. Okano, A. Kaneko et al. · 2006 · 44 citations

Electrical Engineering, Engineering, Vlsi Design +12

Sidewall transfer process and selective gate sidewall spacer formation technology for sub-15nm finfet with elevated source/drain extension

A. Kaneko, A. Yagishita, K. Yahashi et al. · 2006 · 44 citations

Electrical Engineering, Engineering, Sidewall Transfer Process +8