Statistics
Publications
42
Citations
1.1K
H-Index
18
Active since
2002
Ryosuke Iijima is an author at Toshiba (Japan) specializing in semiconductor materials, semiconductor devices, and engineering.
Publications per year
2002–2024
42
42
Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics
M. Koyama, A. Kaneko, Tsunehiro Ino et al. · 2003 · 77 citations
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
M. Chudzik, B. Doris, R. Mo et al. · 2007 · 77 citations
Engineering, Computer Engineering, Electrical Engineering +17
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