M. Chudzik

A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

Sufi Zafar, Y. Kim, Vijay Narayanan et al. · 2006 · 201 citations

Engineering, Electrical Engineering, Materials Science +17

A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

X. Chen, S. Samavedam, Vijay Narayanan et al. · 2008 · 113 citations

Engineering, Computer Engineering, Electrical Engineering +16

Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium–zinc oxide films grown by low-pressure metal-organic chemical vapor deposition

Anchuan Wang, Jiyan Dai, M. Chudzik et al. · Applied Physics Letters · 1998 · 104 citations

Natural Sciences, Materials Engineering, Materials Science +17

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

P. Chang, C. Ortolland, David Fried et al. · 2012 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +17

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen et al. · 2011 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +17