Sufi Zafar - Concepedia

Author

Sufi Zafar

IBM Research - Thomas J. Watson Research Center ORCID

Also Known As

S Zafar, S. Zafar, Sameer Zafar, Shahiduz Zafar, Shaneela Zafar, Sharique Zafar, Sufi Zafar, Syed M Zafar

101

Publications

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Motorola (United States)Syracuse University

About

Sufi Zafar is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	47	3.3K
2	Applied Physics	29	46	3.2K
3	Natural Sciences	3	3	323
4	Biochemistry	2	2	68
5	Medicine	1	1	28

Sufi Zafar

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks Sufi Zafar, Alessandro Callegari, Evgeni Gusev, Journal of Applied Physics Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysics	2003	309
Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks Sufi Zafar, Arvind Kumar, Evgeni Gusev, IEEE Transactions on Device and Materials Reliability Materials EngineeringThreshold Voltage InstabilitiesElectrical EngineeringSemiconductor DeviceEngineering	2005	232
A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates Sufi Zafar, Y. Kim, Vijay Narayanan, EngineeringSilicon On InsulatorSemiconductor DeviceNanoelectronicsField Effect Transistor	2006	200
Ultrathin high-K gate stacks for advanced CMOS devices E. P. Gusev, D. A. Buchanan, E. Cartier, EngineeringVlsi DesignSilicon On InsulatorSemiconductor DeviceNanoelectronics	2002	195
The electronic conduction mechanism in barium strontium titanate thin films Sufi Zafar, Robert E. Jones, Bo Jiang, Applied Physics Letters Materials ScienceElectrical EngineeringSchottky Emission EquationEngineeringBarium Strontium Titanate	1998	170
Oxygen vacancy mobility determined from current measurements in thin Ba0.5Sr0.5TiO3 films Sufi Zafar, Robert E. Jones, Bo Jiang, Applied Physics Letters Materials ScienceCurrent MeasurementsBarium Strontium TitanateEngineeringCurrent Density	1998	167
Charge trapping in ultrathin hafnium oxide Weihang Zhu, T.P. Ma, Sufi Zafar, IEEE Electron Device Letters Materials ScienceStress VoltageElectrical EngineeringEngineeringNanoelectronics	2002	163
Investigation of bulk and interfacial properties of Ba0.5Sr0.5TiO3 thin film capacitors Sufi Zafar, Robert E. Jones, Peir Chu, Applied Physics Letters Materials ScienceElectrical EngineeringMaterial AnalysisEngineeringFerroelectric Application	1998	96
Statistical mechanics based model for negative bias temperature instability induced degradation Sufi Zafar Journal of Applied Physics EngineeringDeterioration ModelingSemiconductor DeviceStabilityLonger Stress Times	2005	95
Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films Sufi Zafar, Hemanth Jagannathan, L. F. Edge, Applied Physics Letters Electrical EngineeringSemiconductor DeviceEngineeringDiffusion ResistanceNanoelectronics	2011	94

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