Statistics
Publications
23
Citations
843
H-Index
16
Active since
1999
R. Mo is an author at IBM (United States) specializing in electrical engineering, semiconductor devices, and engineering.
Publications per year
1999–2025
23
23
High performance CMOS fabricated on hybrid substrate with different crystal orientations
High performance and low power transistors integrated in 65nm bulk CMOS technology
Zuying Luo, An Steegen, M. Eller et al. · 2005 · 81 citations
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
M. Chudzik, B. Doris, R. Mo et al. · 2007 · 77 citations
Engineering, Computer Engineering, Electrical Engineering +17
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
Dechao Guo, G. Karve, Gen Tsutsui et al. · 2016 · 65 citations
Engineering, Computer Engineering, Electrical Engineering +14
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