Gen Tsutsui

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 99 citations

Engineering, Computer Engineering, Electrical Engineering +17

High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Qianlong Liu, M. Vinet, J. Gimbert et al. · 2013 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +10

Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet

Chun Wing Yeung, Jingyun Zhang, Robin Chao et al. · 2018 · 94 citations

Engineering, Electrical Engineering, Physics +17

Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs

Gen Tsutsui, M. Saitoh, Toshiro Hiramoto · IEEE Electron Device Letters · 2005 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir–Blodgett method

Shujuan Huang, Gen Tsutsui, Hiroyuki Sakaue et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 76 citations

Natural Sciences, Chemistry, Materials Science +17