Toshiro Hiramoto

Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Yi Shi, Kenichi Saitô, Hiroki Ishikuro et al. · Journal of Applied Physics · 1998 · 305 citations

Materials Science, Non-volatile Memory, Electrical Engineering +15

Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

Hiroki Ishikuro, Toshiro Hiramoto · Applied Physics Letters · 1997 · 192 citations

Categoryquantum Electronics, Engineering, Semiconductor Device +16

Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate

Hiroki Ishikuro, T. Fujii, Takuya Saraya et al. · Applied Physics Letters · 1996 · 182 citations

Semiconductors, Room Temperature, Electrical Engineering +14

Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

Kan Takeuchi, T. Fukai, Takaaki Tsunomura et al. · 2007 · 161 citations

Engineering, Semiconductor Device, Electromagnetic Compatibility +16

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

Fei Mo, Yusaku Tagawa, Chengji Jin et al. · IEEE Journal of the Electron Devices Society · 2020 · 133 citations · Full text

Ultrathin Igzo Channel, Non-volatile Memory, Engineering +16