Takaaki Tsunomura

Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

Kan Takeuchi, T. Fukai, Takaaki Tsunomura et al. · 2007 · 164 citations

Engineering, Electrical Engineering, Microelectronics +16

Dopant distributions in n-MOSFET structure observed by atom probe tomography

Koji Inoue, Fumiko Yano, Akio Nishida et al. · Ultramicroscopy · 2009 · 89 citations

Engineering, Electrical Engineering, Physics +14

Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

Toshiro Hiramoto, Makoto Suzuki, Xiaowei Song et al. · IEEE Transactions on Electron Devices · 2011 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +17

Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

Koji Inoue, Fumiko Yano, Akio Nishida et al. · Applied Physics Letters · 2009 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of NMOS and PMOS Difference in $V_{T}$ Variation With Large-Scale DMA-TEG

Takaaki Tsunomura, Akio Nishida, Toshiro Hiramoto · IEEE Transactions on Electron Devices · 2009 · 55 citations

Engineering, Electrical Engineering, Microelectronics +16