Kan Takeuchi

Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

Kan Takeuchi, T. Fukai, Takaaki Tsunomura et al. · 2007 · 164 citations

Engineering, Electrical Engineering, Microelectronics +16

Measurement of neutron-induced single event transient pulse width narrower than 100ps

Hideyuki Nakamura, Katsuhiko Tanaka, Taiki Uemura et al. · 2010 · 17 citations

Engineering, Electrical Engineering, Nuclear Engineering +6

Scaling effect and circuit type dependence of neutron induced single event transient

Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi et al. · 2012 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +16

An on-die digital aging monitor against HCI and xBTI in 16 nm Fin-FET bulk CMOS technology

Mitsuhiko Igarashi, Kan Takeuchi, T. Okagaki et al. · 2015 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +17

Si band-gap shrinkage caused by local strain at Si/SiO2 edge

Kan Takeuchi, Masakazu Aoki · Applied Physics Letters · 1992 · 10 citations

Engineering, Electrical Engineering, Materials Science +17