T. Fukai

Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

Kan Takeuchi, T. Fukai, Takaaki Tsunomura et al. · 2007 · 164 citations

Engineering, Electrical Engineering, Microelectronics +16

Sub-50-nm physical gate length CMOS technology and beyond using steep halo

Hitoshi Wakabayashi, M. Ueki, M. Narihiro et al. · IEEE Transactions on Electron Devices · 2002 · 39 citations

Engineering, Electrical Engineering, Microelectronics +9

45-nm gate length CMOS technology and beyond using steep halo

Hitoshi Wakabayashi, M. Ueki, M. Narihiro et al. · 2002 · 39 citations

Engineering, Electrical Engineering, Microelectronics +12

Development of single-ion implantation — controllability of implanted ion number

Takashi Matsukawa, T. Fukai, Shinsuke Suzuki et al. · Applied Surface Science · 1997 · 38 citations

Engineering, Biomedical Engineering, Implant Surgery +4

Power-aware 65 nm node CMOS technology using variable V/sub DD/ and back-bias control with reliability consideration for back-bias mode

M. Togo, T. Fukai, Y. Nakahara et al. · 2004 · 25 citations

Engineering, Electrical Engineering, Low-power Design +16