M. Narihiro

Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states

M. Narihiro, G. Yusa, Y. Nakamura et al. · Applied Physics Letters · 1997 · 128 citations

Semiconductors, Quantum Science, Categoryquantum Electronics +13

Sub-10-nm planar-bulk-CMOS devices using lateral junction control

Hitoshi Wakabayashi, Shigeharu Yamagami, N. Ikezawa et al. · 2004 · 64 citations

Device Modeling, Electrical Engineering, Engineering +10

Low-power embedded ReRAM technology for IoT applications

M. Ueki, Kazuhiro Takeuchi, Takashi Yamamoto et al. · 2015 · 57 citations

Sub-50-nm physical gate length CMOS technology and beyond using steep halo

Hitoshi Wakabayashi, M. Ueki, M. Narihiro et al. · IEEE Transactions on Electron Devices · 2002 · 39 citations

Low-power Electronics, Electrical Engineering, Physical Design (Electronics) +14

45-nm gate length CMOS technology and beyond using steep halo

Hitoshi Wakabayashi, M. Ueki, M. Narihiro et al. · 2002 · 39 citations

Low-power Electronics, Electrical Engineering, Engineering +12