M. Narihiro

Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states

M. Narihiro, G. Yusa, Y. Nakamura et al. · Applied Physics Letters · 1997 · 128 citations

Natural Sciences, Physics, Condensed Matter Physics +16

Sub-10-nm planar-bulk-CMOS devices using lateral junction control

Hitoshi Wakabayashi, Shigeharu Yamagami, N. Ikezawa et al. · 2004 · 64 citations

Engineering, Computer Engineering, Electrical Engineering +15

Low-power embedded ReRAM technology for IoT applications

M. Ueki, Kazuhiro Takeuchi, Takashi Yamamoto et al. · 2015 · 57 citations

Engineering, Computer Engineering, Electrical Engineering +12

Sub-50-nm physical gate length CMOS technology and beyond using steep halo

Hitoshi Wakabayashi, M. Ueki, M. Narihiro et al. · IEEE Transactions on Electron Devices · 2002 · 39 citations

Engineering, Electrical Engineering, Microelectronics +9

Characteristics and Modeling of Sub-10-nm Planar Bulk CMOS Devices Fabricated by Lateral Source/Drain Junction Control

Hitoshi Wakabayashi, T. Ezaki, Toshitsugu Sakamoto et al. · IEEE Transactions on Electron Devices · 2006 · 39 citations

Engineering, Electrical Engineering, Microelectronics +15