Shigeharu Yamagami

Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate

W. Saitoh, Atsushi Itoh Atsushi Itoh, Shigeharu Yamagami et al. · Japanese Journal of Applied Physics · 1999 · 88 citations

Device Modeling, Electrical Engineering, Metal Gate +12

Sub-10-nm planar-bulk-CMOS devices using lateral junction control

Hitoshi Wakabayashi, Shigeharu Yamagami, N. Ikezawa et al. · 2004 · 64 citations

Device Modeling, Electrical Engineering, Engineering +10

35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

W. Saitoh, Shigeharu Yamagami, Atsushi Itoh Atsushi Itoh et al. · Japanese Journal of Applied Physics · 1999 · 22 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +15

SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode

W.-X. Ni, Kenta Emori, Toshiharu Marui et al. · Materials science forum · 2014 · 19 citations

Poly-crystalline Silicon, Electrical Engineering, Engineering +9