W. Saitoh

Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate

W. Saitoh, Atsushi Itoh Atsushi Itoh, Shigeharu Yamagami et al. · Japanese Journal of Applied Physics · 1999 · 88 citations

Device Modeling, Electrical Engineering, Metal Gate +12

35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

W. Saitoh, Shigeharu Yamagami, Atsushi Itoh Atsushi Itoh et al. · Japanese Journal of Applied Physics · 1999 · 22 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +15

Ultra low on-resistance SBD with p-buried floating layer

W. Saitoh, Ichiro Omura, K. Tokano et al. · 2003 · 22 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy

M. Watanabe, W. Saitoh, Yuichi Aoki et al. · Solid-State Electronics · 1998 · 15 citations

Materials Science, Engineering, Nanomaterials +7

Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon

W. Saitoh, Katsuyuki Yamazaki Katsuyuki Yamazaki, Masahiro Asada et al. · Japanese Journal of Applied Physics · 1996 · 12 citations

Device Modeling, Electrical Engineering, Cosi 2 +10