W.-X. Ni

SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode

W.-X. Ni, Kenta Emori, Toshiharu Marui et al. · Materials science forum · 2014 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Asymmetric relaxation of SiGe∕Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping

A. Elfving, Ming Zhao, G. V. Hansson et al. · Applied Physics Letters · 2006 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +17

High quality Si/Si1−<i>x</i>Ge<i>x</i> layered structures grown using a mass-spectrometry controlled electron-beam evaporation system

W.-X. Ni, Anne Henry, Mats I. Larsson et al. · Applied Physics Letters · 1994 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of ion bombardment on Si and SiGe films during molecular beam epitaxy growth

W.-X. Ni, G. V. Hansson, I. A. Buyanova et al. · Applied Physics Letters · 1996 · 17 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence study of Si/Ge quantum dots

Marcus Larsson, A. Elfving, P. O. Holtz et al. · Surface Science · 2003 · 15 citations

Engineering, Materials Engineering, Materials Science +14