Applied Physics Letters · 2006 · 19 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsCrystal StructureMaterials CharacterizationCrystal LatticeCrystallographyLattice SymmetryReciprocal LatticeX-ray CrystallographyX-ray DiffractionDislocation EvolutionDislocation MotionLattice MismatchLattice Mismatch StrainLattice StrainReciprocal Space MappingStrain RelaxationX-ray Diffraction Strain Analysis
Strain relaxation of SiGe∕Si(110) has been studied by x-ray reciprocal space mapping. To get information about the in-plane lattice mismatch in different directions, two-dimensional maps around, e.g., (260) and (062) reciprocal lattice points have been obtained from Si0.8Ge0.2∕Si(110) samples, which were exposed to different annealing conditions. The in-plane lattice mismatch was found to be asymmetric with the major strain relaxation observed in the lateral [001] direction. This was associated with the formation and propagation of dislocations oriented along [1¯10]. The relaxation of as-grown structures during postannealing is thus different from relaxation during growth, which is mainly along [1¯10].
8
Growth of Ge<i>x</i>Si1−<i>x</i> alloys on Si(110) surfaces
R. Hull, J. C. Bean, L. J. Peticolas et al. · Applied Physics Letters · 1991 · 63 citations
Natural Sciences, Materials Engineering, Materials Science +17
R. Hull, J. C. Bean, L. J. Peticolas et al. · Applied Physics Letters · 1992 · 48 citations
Natural Sciences, Materials Engineering, Materials Science +17