L. J. Peticolas

Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films

Christian Teichert, M. G. Lagally, L. J. Peticolas et al. · Physical review. B, Condensed matter · 1996 · 237 citations

Engineering, Materials Engineering, Materials Science +17

Interpretation of dislocation propagation velocities in strained Ge<i>x</i>Si1−<i>x</i>/Si(100) heterostructures by the diffusive kink pair model

R. Hull, J. C. Bean, D. Bahnck et al. · Journal of Applied Physics · 1991 · 109 citations

Natural Sciences, Materials Engineering, Materials Science +17

An efficient method for cleaning Ge(100) surface

K. Prabhakarana, T. Ogino, R. Hull et al. · Surface Science · 1994 · 83 citations

Natural Sciences, Materials Engineering, Materials Science +12

Broadband (8–14 μm), normal incidence, pseudomorphic Ge<i>x</i>Si1−<i>x</i>/Si strained-layer infrared photodetector operating between 20 and 77 K

R. People, J. C. Bean, C. G. Bethea et al. · Applied Physics Letters · 1992 · 73 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Formation of thermally stable high-resistivity AlGaAs by oxygen implantation

S. J. Pearton, M. Iannuzzi, C. L. Reynolds et al. · Applied Physics Letters · 1988 · 73 citations

Engineering, Materials Engineering, Materials Science +17