Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films

Abstract

In the growth of ${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ films on Si(001), the growth front undergoes a series of elastic stress relief mechanisms. We use these mechanisms in the molecular-beam-epitaxy growth of SiGe/Si superlattices to create relatively periodic surface and interface patterns of small coherent {105}-faceted SiGe crystallites. The self-organization of these islands is affected in different ways by tuning substrate miscut, alloy composition, and layer thickness. \textcopyright{}1996 The American Physical Society.