J. C. Bean

Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattice grown by molecular beam epitaxy

J. C. Bean, L. C. Feldman, A. T. Fiory et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 676 citations

Semiconductors, Materials Engineering, Materials Science +13

Raman scattering from Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattices

F. Cerdeira, A. Pinczuk, J. C. Bean et al. · Applied Physics Letters · 1984 · 263 citations

Semiconductors, Materials Science, Materials Engineering +14

Observation of Order-Disorder Transitions in Strained-Semiconductor Systems

A. Ourmazd, J. C. Bean · Physical Review Letters · 1985 · 261 citations

Semiconductors, Materials Science, Engineering +14

Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films

Christian Teichert, M. G. Lagally, L. J. Peticolas et al. · Physical review. B, Condensed matter · 1996 · 237 citations

Engineering, Crystal Growth Technology, Silicon On Insulator +17

Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors

D. H. Auston, Anthony Johnson, P. R. Smith et al. · Applied Physics Letters · 1980 · 223 citations

High-defect-density Amorphous Semiconductors, Engineering, Semiconductor Materials +18