Applied Physics Letters · 1980 · 225 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsAmorphous Electronic MaterialsAmorphous SemiconductorsDevice CharacterizationOptoelectronic MaterialsSemiconductor DefectsSemiconductor PhysicsAmorphous SiliconCarrier RelaxationCarrier Relaxation DynamicsCorrelationMeasurement System CapabilitySemiconductor CharacterizationSemiconductor Device CharacterizationUltrafast Carrier Dynamics
The rapid relaxation of the photoresponse of high-defect-density amorphous semiconductors such as evaporated a-Si has been utilized to develop an electronic measurement capability which can generate and sample electronic transients with speeds ≲10 ps.
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Structural, Optical, and Electrical Properties of Amorphous Silicon Films
M. H. Brodsky, R. S. Title, K. Weiser et al. · Physical review. B, Solid state · 1970 · 515 citations
An amorphous silicon photodetector for picosecond pulses
D. H. Auston, P. Lavallard, N. Sol et al. · Applied Physics Letters · 1980 · 142 citations
Engineering, Electrical Engineering, Materials Engineering +17