D. Bahnck

Interpretation of dislocation propagation velocities in strained Ge<i>x</i>Si1−<i>x</i>/Si(100) heterostructures by the diffusive kink pair model

R. Hull, J. C. Bean, D. Bahnck et al. · Journal of Applied Physics · 1991 · 109 citations

Materials Science, Diffusive Double-kink, Engineering +14

Applications of focused ion beams in microelectronics production, design and development

F. A. Stevie, T. C. Shane, P. M. Kahora et al. · Surface and Interface Analysis · 1995 · 71 citations

Engineering, Microscopy, Probe Pads +20

Growth of Ge<i>x</i>Si1−<i>x</i> alloys on Si(110) surfaces

R. Hull, J. C. Bean, L. J. Peticolas et al. · Applied Physics Letters · 1991 · 63 citations

Materials Science, Materials Engineering, Surface Characterization +14

Quantitative analysis of strain relaxation in Ge<i>x</i>Si1−<i>x</i>/Si(110) heterostructures and an accurate determination of stacking fault energy in Ge<i>x</i>Si1−<i>x</i> alloys

R. Hull, J. C. Bean, L. J. Peticolas et al. · Applied Physics Letters · 1992 · 48 citations

Materials Engineering, Materials Science, Critical Thickness +15

Phonon-terminated laser emission from Ni^2+ ions in KMgF_3

L. F. Johnson, A. M. Johnson, H. J. Guggenheim et al. · Optics Letters · 1983 · 47 citations

Optical Materials, Engineering, Physics +13