P. M. Kahora

Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

F. A. Stevie, P. M. Kahora, David S. Simons et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1988 · 155 citations

Semiconductors, Dopant Species, Electrical Engineering +15

Applications of focused ion beams in microelectronics production, design and development

F. A. Stevie, T. C. Shane, P. M. Kahora et al. · Surface and Interface Analysis · 1995 · 71 citations

Engineering, Microscopy, Probe Pads +20

Boron contamination of surfaces in silicon microelectronics processing: Characterization and causes

F. A. Stevie, E.P. Martin, P. M. Kahora et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 35 citations

Materials Science, Chemical Engineering, Boron Nitride +15

Enhanced tail diffusion of ion implanted boron in silicon

Dongbin Fan, Jin Huang, R. J. Jaccodine et al. · Applied Physics Letters · 1987 · 30 citations

Materials Engineering, Materials Science, Electrical Engineering +12

The Effect of Fluorine Additions to the Oxidation of Silicon

U. S. Kim, C. Wolowodiuk, R. J. Jaccodine et al. · Journal of The Electrochemical Society · 1990 · 14 citations

Materials Engineering, Materials Science, Environmental Chemistry +13