Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemission

Per Mårtensson, W.-X. Ni, G. V. Hansson, +2

Physical review. B, Condensed matter

Surface CharacterizationIi-vi SemiconductorEngineeringElectronic MaterialsPhysics +13

Synthesis design of artificial magnetic metamaterials using a genetic algorithm

Pengxiang Chen, C. H. Chen, H. Wang, +2

Optics Express

Materials ScienceMagnetismArtificial IntelligenceArtificial Magnetic MetamaterialEngineering +12

Observation of a Charge Transfer State in Low‐Bandgap Polymer/Fullerene Blend Systems by Photoluminescence and Electroluminescence Studies

Yi Zhou, Kristofer Tvingstedt, Fengling Zhang, +4

Advanced Functional Materials

Organic Charge-transfer CompoundElectronic DevicesEngineeringElectronic MaterialsPhotochemistry +13

Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy

W.-X. Ni, J. Knall, M. Arif Hasan, +5

Physical review. B, Condensed matter

Materials ScienceMaterials EngineeringEpitaxial GrowthMolecular-beam EpitaxyEngineering +13

<i>n</i>-Si/<i>p</i>-Si1−<i>x</i>Ge<i>x</i>/<i>n</i>-Si double-heterojunction bipolar transistors

Dan‐Xia Xu, Guangdi Shen, M. Willander, +2

Applied Physics Letters

SemiconductorsDifferent StructuresElectrical EngineeringSemiconductor TechnologyEngineering +7

Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy

J.-P. Noël, N. Hirashita, L. C. Markert, +6

Journal of Applied Physics

Si FilmsEngineeringOptoelectronic DevicesSilicon On InsulatorElectrical Properties +15

Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates

Wei Li, W.-X. Ni

Applied Physics Letters

Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering +13

A silicon molecular beam epitaxy system dedicated to device-oriented material research

W.-X. Ni, Joakim Ekberg, K. B. Joelsson, +4

Journal of Crystal Growth

Materials EngineeringMaterials ScienceWafer Scale ProcessingEngineeringNanotechnology +6

Fabrication and characterisation of Si-Si _0.7 Ge _0.3 quantum dot lightemitting diodes

Y. S. Tang, W.-X. Ni, G.V. Hansson

Electronics Letters

Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

W.-X. Ni, K. B. Joelsson, Congju Du, +6

Applied Physics Letters

EngineeringOptoelectronic DevicesSilicon On InsulatorSemiconductorsElectronic Devices +14