W.-X. Ni

Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemission

Per Mårtensson, W.-X. Ni, G. V. Hansson et al. · Physical review. B, Condensed matter · 1987 · 112 citations

Surface Characterization, Ii-vi Semiconductor, Engineering +15

Synthesis design of artificial magnetic metamaterials using a genetic algorithm

Pengxiang Chen, C. H. Chen, H. Wang et al. · Optics Express · 2008 · 102 citations · Full text

Materials Science, Magnetism, Artificial Intelligence +14

Observation of a Charge Transfer State in Low‐Bandgap Polymer/Fullerene Blend Systems by Photoluminescence and Electroluminescence Studies

Yi Zhou, Kristofer Tvingstedt, Fengling Zhang et al. · Advanced Functional Materials · 2009 · 81 citations

Organic Charge-transfer Compound, Electronic Devices, Engineering +15

Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy

W.-X. Ni, J. Knall, M. Arif Hasan et al. · Physical review. B, Condensed matter · 1989 · 71 citations

Materials Science, Materials Engineering, Epitaxial Growth +15

<i>n</i>-Si/<i>p</i>-Si1−<i>x</i>Ge<i>x</i>/<i>n</i>-Si double-heterojunction bipolar transistors

Dan‐Xia Xu, Guangdi Shen, M. Willander et al. · Applied Physics Letters · 1988 · 50 citations

Semiconductors, Different Structures, Electrical Engineering +9