M. Arif Hasan

Al induced crystallization of <i>a</i>-Si

G. Radnóczi, A. Robertsson, H. T. G. Hentzell et al. · Journal of Applied Physics · 1991 · 187 citations

Materials Science, Materials Engineering, Heat Treatment +15

Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning

X.-J. Zhang, G. Xue, Ankur Agarwal et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 133 citations

Engineering, Vacuum Device, Chemistry +16

Si(001)2×1 gas-source molecular-beam epitaxy from Si2H6: Growth kinetics and boron doping

T. R. Bramblett, Qingyi Lu, T. Karasawa et al. · Journal of Applied Physics · 1994 · 86 citations

Semiconductors, Si Films, Epitaxial Growth +13

Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy

M. Arif Hasan, J. Knall, Scott A. Barnett et al. · Journal of Applied Physics · 1989 · 72 citations

Materials Science, Semiconductors, Si Growth Rate +15

Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy

W.-X. Ni, J. Knall, M. Arif Hasan et al. · Physical review. B, Condensed matter · 1989 · 71 citations

Materials Science, Materials Engineering, Epitaxial Growth +15