Electronic structures in circular, elliptic, and triangular quantum dots

T. Ezaki, N. Mori, Chihiro Hamaguchi

Physical review. B, Condensed matter

Quantum ScienceEngineeringPhysicsNatural SciencesElliptic Quantum Dot +11

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura–Mattausch, N. Sadachika, D. Navarro, +13

IEEE Transactions on Electron Devices

EngineeringSurface PotentialsChannel Surface PotentialPower ElectronicsElectromagnetic Compatibility +14

Completely Surface-Potential-Based Compact Model of the Fully Depleted SOI-MOSFET Including Short-Channel Effects

N. Sadachika, D. Kitamaru, Y. Uetsuji, +5

IEEE Transactions on Electron Devices

Device ModelingMosfet ChannelElectrical EngineeringSurface-potential-based Compact ModelEngineering +9

A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion Analysis

D. Navarro, Yoichi Takeda, M. Miyake, +5

IEEE Transactions on Electron Devices

Device ModelingElectrical EngineeringCompact ModelEngineeringNonlinear Circuit +11

39.4: Large Size FED with Carbon Nanotube Emitter

Sashiro Uemura, Junko Yotani, Takeshi Nagasako, +7

SID Symposium Digest of Technical Papers

EngineeringCarbon NanotechnologyCnt FedCnt EmitterElectronic Devices +14

Characteristics and Modeling of Sub-10-nm Planar Bulk CMOS Devices Fabricated by Lateral Source/Drain Junction Control

Hitoshi Wakabayashi, T. Ezaki, Toshitsugu Sakamoto, +10

IEEE Transactions on Electron Devices

Device ModelingElectrical EngineeringPhysical Design (Electronics)EngineeringSemiconductor Device +9

Atomistic 3D process/device simulation considering gate line-edge roughness and poly-Si random crystal orientation effects [MOSFETs]

M. Hane, T. Ikezawa, T. Ezaki

EngineeringOblique Halo ImplantationComputer-aided DesignSemiconductor DevicePhysical Design (Electronics) +17

Electronic properties in quantum dots with asymmetric confining potential

T. Ezaki, Yuichiro Sugimoto, N. Mori, +1

Semiconductor Science and Technology

EngineeringQuantum ComputingPhysicsNatural SciencesApplied Physics +7

Measurements of electron density and temperature in a miniature microwave discharge ion thruster using laser Thomson scattering technique

Norifumi Yamamoto, K Tomita, N. Yamasaki, +5

Plasma Sources Science and Technology

EngineeringLaser-plasma InteractionPlasma SciencePlasma PhysicsLaser Thomson Scattering +15

Investigation of realistic dopant fluctuation induced device characteristics variation for sub-100 nm CMOS by using atomistic 3D process/device simulator

T. Ezaki, T. Ikezawa, M. Hane

EngineeringVlsi DesignDiscrete Dopant AtomsSemiconductor DeviceDevice Characteristics Fluctuations +14