D. Navarro - Concepedia

Author

D. Navarro

Also Known As

D Navarro, D. NAVARRO, D. Navarro, Dario Rios Navarro, Dondee NAVARRO, Dondee Navarro, Dondee Serveza Navarro, Dulce M. Navarro

Publications

537

Citations

H-Index

Concepts

All Affiliations

Hiroshima University Semiconductor Energy Laboratory (Japan)Panasonic (Japan)Sanyo (Japan)

About

D. Navarro is an author at Hiroshima University specializing in engineering, electrical engineering, and device modeling.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	307
2	Electrical Engineering	10	10	307
3	Applied Physics	4	4	96
4	Computer Engineering	4	4	181
5	Materials Engineering	1	1	18

D. Navarro

Publications

356

Citations

H-Index

Page 1

	Year	Citations
HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation M. Miura–Mattausch, N. Sadachika, D. Navarro, IEEE Transactions on Electron Devices EngineeringSurface PotentialsChannel Surface PotentialPower ElectronicsElectromagnetic Compatibility	2006	110
Completely Surface-Potential-Based Compact Model of the Fully Depleted SOI-MOSFET Including Short-Channel Effects N. Sadachika, D. Kitamaru, Y. Uetsuji, IEEE Transactions on Electron Devices Device ModelingMosfet ChannelElectrical EngineeringSurface-potential-based Compact ModelEngineering	2006	52
A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion Analysis D. Navarro, Yoichi Takeda, M. Miyake, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringCompact ModelEngineeringNonlinear Circuit	2006	46
HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design Masataka Miyake, D. Navarro, Uwe Feldmann, IEEE Transactions on Electron Devices	2012	26
Non-quasi-static model for MOSFET based on carrier-transit delay N. Nakayama, D. Navarro, M. Tanaka, Electronics Letters Device ModelingTime Delay SystemElectrical EngineeringNon-quasi-static ModelEngineering	2004	19
Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects I. Pesic, D. Navarro, Masataka Miyake, Solid-State Electronics Materials EngineeringElectrical EngineeringEngineeringBias Temperature InstabilityApplied Physics	2014	18
High frequency response of p-i-n photodiodes analyzed by an analytical model in Fourier space Kohkichi Konno, O. Matsushima, D. Navarro, Journal of Applied Physics PhotonicsElectrical EngineeringPhotoelectric SensorEngineeringFourier Space	2004	14
A Sequential Model Parameter Extraction Technique for Physics-Based IGBT Compact Models D. Navarro, Takeshi Sano, Yoshiharu Furui IEEE Transactions on Electron Devices Numerical AnalysisDevice ModelingElectrical EngineeringCompact Igbt ModelEngineering	2012	14
Power Reduction and BTI Mitigation of Data-Cache Memory Based on the Storage Management of Narrow-Width Values Nezam Rohbani, Hiroaki Gau, Sara Mohammadinejad, IEEE Transactions on Very Large Scale Integration (VLSI) Systems	2019	13
Limit of validity of the drift-diffusion approximation for simulation of photodiode characteristics Kohkichi Konno, O. Matsushima, D. Navarro, Applied Physics Letters EngineeringOptoelectronic DevicesIntegrated CircuitsPhotodiode CharacteristicsPhotovoltaics	2004	12

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