Electronics Letters · 2004 · 19 citations · 4 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCarrier TransportDelay ModelingDevice ModelingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsTransient AnalysisCircuit Delay ModelingCircuit SimulationField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingTransient Device Modeling
A non-quasi-static MOSFET model for circuit simulation, which is based on the carrier-transit delay responsible for the channel formation during switching on, has been developed. The developed model was implemented into a circuit simulator, and good agreement of transient drain current with 2D simulation results was confirmed.
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