T. Ohguro

1.5 nm direct-tunneling gate oxide Si MOSFET's

H. Sasaki, Mizuki Ono, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1996 · 345 citations

Room Temperature, Electrical Engineering, Engineering +9

NiSi salicide technology for scaled CMOS

Hiroshi Iwai, T. Ohguro, Shun-ichiro Ohmi · Microelectronic Engineering · 2002 · 306 citations

Electrical Engineering, Nisi Salicide Technology, Engineering +4

Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

T. Morimoto, T. Ohguro, H.S. Momose et al. · IEEE Transactions on Electron Devices · 1995 · 275 citations

Engineering, Vlsi Design, Optoelectronic Devices +18

The impact of scaling down to deep submicron on CMOS RF circuits

Q. Huang, Francesco Piazza, P. Orsatti et al. · IEEE Journal of Solid-State Circuits · 1998 · 246 citations

Cmos Scaling, Engineering, Computer Architecture +17

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

T. Ohguro, S. Nakamura, M. Koike et al. · IEEE Transactions on Electron Devices · 1994 · 151 citations

Engineering, Line Width, Integrated Circuits +18