Mizuki Ono

1.5 nm direct-tunneling gate oxide Si MOSFET's

H. Sasaki, Mizuki Ono, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1996 · 345 citations

Room Temperature, Electrical Engineering, Engineering +9

Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

T. Morimoto, T. Ohguro, H.S. Momose et al. · IEEE Transactions on Electron Devices · 1995 · 275 citations

Engineering, Vlsi Design, Optoelectronic Devices +18

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

T. Ohguro, S. Nakamura, M. Koike et al. · IEEE Transactions on Electron Devices · 1994 · 151 citations

Engineering, Line Width, Integrated Circuits +18

A 40 nm gate length n-MOSFET

Mizuki Ono, M. Saito, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1995 · 114 citations

Materials Science, Semiconductors, Electrical Engineering +13

Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

Mizuki Ono, M. Saito, T. Yoshitomi et al. · 2002 · 105 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15