H.S. Momose

Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

T. Morimoto, T. Ohguro, H.S. Momose et al. · IEEE Transactions on Electron Devices · 1995 · 275 citations

Engineering, Vlsi Design, Optoelectronic Devices +18

Deep trench isolated CMOS devices

R.D. Rung, H.S. Momose, Yoshihide Nagakubo · 1982 · 118 citations

Low-power Electronics, Electrical Engineering, Engineering +8

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

H.S. Momose, Shigenari Nakamura, T. Ohguro et al. · IEEE Transactions on Electron Devices · 1998 · 106 citations

Electrical Engineering, Gate Oxide, Engineering +11

Future perspective and scaling down roadmap for RF CMOS

E. Morifuji, H.S. Momose, T. Ohguro et al. · 2003 · 94 citations

Electrical Engineering, Engineering, Vlsi Design +14

High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

H.S. Momose, E. Morifuji, T. Yoshitomi et al. · 2002 · 87 citations

Electrical Engineering, Engineering, Rf Semiconductor +10