E. Morifuji

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

H.S. Momose, Shigenari Nakamura, T. Ohguro et al. · IEEE Transactions on Electron Devices · 1998 · 106 citations

Electrical Engineering, Gate Oxide, Engineering +11

A single-chip CMOS transceiver for DCS-1800 wireless communications

Michiel Steyaert, M. Borremans, Johan Janssens et al. · 2002 · 95 citations

Wireless Communications, Electrical Engineering, Engineering +10

Future perspective and scaling down roadmap for RF CMOS

E. Morifuji, H.S. Momose, T. Ohguro et al. · 2003 · 94 citations

Electrical Engineering, Engineering, Vlsi Design +14

High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

H.S. Momose, E. Morifuji, T. Yoshitomi et al. · 2002 · 87 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Supply and threshold-Voltage trends for scaled logic and SRAM MOSFETs

E. Morifuji, Takeshi Yoshida, M. Kanda et al. · IEEE Transactions on Electron Devices · 2006 · 81 citations

Low-power Electronics, Power Consumption, Electrical Engineering +14