2002 · 87 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsMicrowave OscillatorsOxide SemiconductorsRadio-frequency Integrated CircuitsCmos OscillatorsCmos Radio-frequency CircuitsDirect TunnelingGate OxidesHigh-frequency ElectronicsHigh-frequency OperationHigh-frequency PerformanceTransconductance
Results of the high-frequency AC characteristics of 1.5 nm direct-tunneling gate oxide MOSFET's were shown for the first time. Very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 /spl mu/m regime due to the high transconductance. Excellent NF/sub min/ value of 0.51 dB was obtained at high-frequency operation of 2 GHz. Also, good operation of the 1.5 nm gate oxide CMOS ring oscillator has been confirmed.
3
High performance 0.1 μm CMOS devices with 1.5 V power supply
Y. Taur, Shalom J. Wind, Y. J. Mii et al. · 2002 · 92 citations
Engineering, Computer Engineering, Electrical Engineering +17
High performance 0.15 μm single gate Co salicide CMOS
T. Yoshitomi, T. Ohguro, M. Saito et al. · 2002 · 15 citations