High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

Abstract

Results of the high-frequency AC characteristics of 1.5 nm direct-tunneling gate oxide MOSFET's were shown for the first time. Very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 /spl mu/m regime due to the high transconductance. Excellent NF/sub min/ value of 0.51 dB was obtained at high-frequency operation of 2 GHz. Also, good operation of the 1.5 nm gate oxide CMOS ring oscillator has been confirmed.