T. Morimoto

Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

T. Morimoto, T. Ohguro, H.S. Momose et al. · IEEE Transactions on Electron Devices · 1995 · 275 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

T. Ohguro, S. Nakamura, M. Koike et al. · IEEE Transactions on Electron Devices · 1994 · 151 citations

Engineering, Electrical Engineering, Materials Science +10

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

H.S. Momose, Shigenari Nakamura, T. Ohguro et al. · IEEE Transactions on Electron Devices · 1998 · 106 citations

Engineering, Electrical Engineering, Manufacturing Engineering +17

A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETs

Masakatsu Tsuchiaki, Hisashi Hara, T. Morimoto et al. · IEEE Transactions on Electron Devices · 1993 · 97 citations

Engineering, Electrical Engineering, Microelectronics +16

High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

H.S. Momose, E. Morifuji, T. Yoshitomi et al. · 2002 · 87 citations

Engineering, Electrical Engineering, Microelectronics +16