Concepedia

T. Yoshitomi

TY

Statistics

Publications

37

Citations

1.7K

H-Index

22

Active since

1993

Affiliations

Toshiba (Japan)(Current)

Hodges University

Semiconductor Manufacturing International (Italy)

Toshiba (South Korea)

University of Ferrara

T. Yoshitomi is an author at Toshiba (Japan) specializing in engineering, electrical engineering, and semiconductor devices.

Publications per year

1993–2003

37

Publications

37

1.5 nm direct-tunneling gate oxide Si MOSFET's

H. Sasaki, Mizuki Ono, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1996 · 346 citations

Engineering, Electrical Engineering, Microelectronics +15

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

T. Ohguro, S. Nakamura, M. Koike et al. · IEEE Transactions on Electron Devices · 1994 · 151 citations

Engineering, Electrical Engineering, Materials Science +10

A 40 nm gate length n-MOSFET

Mizuki Ono, M. Saito, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1995 · 114 citations

Engineering, Electrical Engineering, Materials Science +17

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

H.S. Momose, Shigenari Nakamura, T. Ohguro et al. · IEEE Transactions on Electron Devices · 1998 · 106 citations

Engineering, Electrical Engineering, Manufacturing Engineering +17

Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

Mizuki Ono, M. Saito, T. Yoshitomi et al. · 2002 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

1–5 of 37