M. Saito

1.5 nm direct-tunneling gate oxide Si MOSFET's

H. Sasaki, Mizuki Ono, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1996 · 345 citations

Room Temperature, Electrical Engineering, Engineering +9

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

T. Ohguro, S. Nakamura, M. Koike et al. · IEEE Transactions on Electron Devices · 1994 · 151 citations

Engineering, Line Width, Integrated Circuits +18

A 40 nm gate length n-MOSFET

Mizuki Ono, M. Saito, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1995 · 114 citations

Materials Science, Semiconductors, Electrical Engineering +13

Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

Mizuki Ono, M. Saito, T. Yoshitomi et al. · 2002 · 105 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Scaling the MOS transistor below 0.1 μm: methodology, device structures, and technology requirements

C. Fiegna, Hiroshi Iwai, T. Wada et al. · IEEE Transactions on Electron Devices · 1994 · 99 citations

Low-power Electronics, Device Modeling, Electrical Engineering +14