Concepedia

M. Saito

MS

Statistics

Publications

32

Citations

1.5K

H-Index

18

Active since

1993

Affiliations

Toshiba (Japan)(Current)

Toshiba (South Korea)

The University of Tokyo

University of Bologna

Semiconductor Manufacturing International (Italy)

M. Saito is an author at Toshiba (Japan) specializing in engineering, electrical engineering, and semiconductor devices.

Publications per year

1993–2023

32

Publications

32

1.5 nm direct-tunneling gate oxide Si MOSFET's

H. Sasaki, Mizuki Ono, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1996 · 346 citations

Engineering, Electrical Engineering, Microelectronics +15

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

T. Ohguro, S. Nakamura, M. Koike et al. · IEEE Transactions on Electron Devices · 1994 · 151 citations

Engineering, Electrical Engineering, Materials Science +10

A 40 nm gate length n-MOSFET

Mizuki Ono, M. Saito, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1995 · 114 citations

Engineering, Electrical Engineering, Materials Science +17

Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

Mizuki Ono, M. Saito, T. Yoshitomi et al. · 2002 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

Scaling the MOS transistor below 0.1 μm: methodology, device structures, and technology requirements

C. Fiegna, Hiroshi Iwai, T. Wada et al. · IEEE Transactions on Electron Devices · 1994 · 99 citations

Engineering, Electrical Engineering, Microelectronics +16

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