Y. Katsumata

Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

T. Morimoto, T. Ohguro, H.S. Momose et al. · IEEE Transactions on Electron Devices · 1995 · 275 citations

Engineering, Electrical Engineering, Materials Science +17

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

H.S. Momose, Shigenari Nakamura, T. Ohguro et al. · IEEE Transactions on Electron Devices · 1998 · 106 citations

Engineering, Electrical Engineering, Manufacturing Engineering +17

Future perspective and scaling down roadmap for RF CMOS

E. Morifuji, H.S. Momose, T. Ohguro et al. · 1999 · 94 citations

Engineering, Electrical Engineering, Microelectronics +16

High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

H.S. Momose, E. Morifuji, T. Yoshitomi et al. · 2002 · 87 citations

Engineering, Electrical Engineering, Microelectronics +16

Analysis for efficiency potential of high‐efficiency and next‐generation solar cells

Masafumi Yamaguchi, Kan‐Hua Lee, Kenji Araki et al. · Progress in Photovoltaics Research and Applications · 2017 · 63 citations

Engineering, Electrical Engineering, Materials Science +17