Hans Jürgen Mattausch

Status and trends of power semiconductor device models for circuit simulation

R. Kraus, Hans Jürgen Mattausch · IEEE Transactions on Power Electronics · 1998 · 133 citations

Engineering, Electrical Engineering, Microelectronics +10

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura–Mattausch, N. Sadachika, D. Navarro et al. · IEEE Transactions on Electron Devices · 2006 · 110 citations

Engineering, Electrical Engineering, Circuit Theory +16

A cost-efficient high-performance dynamic TCAM with pipelined hierarchical searching and shift redundancy architecture

Haruhiko Noda, Kazunari Inoue, M. Kuroiwa et al. · IEEE Journal of Solid-State Circuits · 2005 · 104 citations

Engineering, Computer Engineering, Computer Science +17

HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

Y. Oritsuki, Masahiro Yokomichi, Takahiro Kajiwara et al. · IEEE Transactions on Electron Devices · 2010 · 55 citations

Engineering, Electrical Engineering, Circuit Theory +16

Power-Loss Prediction of High-Voltage SiC-<sc>mosfet</sc> Circuits With Compact Model Including Carrier-Trap Influences

Yuta Tanimoto, A. Saito, Kai Matsuura et al. · IEEE Transactions on Power Electronics · 2015 · 53 citations

Engineering, Electrical Engineering, Materials Science +17