Hans Jürgen Mattausch

Status and trends of power semiconductor device models for circuit simulation

R. Kraus, Hans Jürgen Mattausch · IEEE Transactions on Power Electronics · 1998 · 132 citations

Device Modeling, Electrical Engineering, Engineering +12

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura–Mattausch, N. Sadachika, D. Navarro et al. · IEEE Transactions on Electron Devices · 2006 · 110 citations

Engineering, Surface Potentials, Channel Surface Potential +16

A cost-efficient high-performance dynamic TCAM with pipelined hierarchical searching and shift redundancy architecture

Haruhiko Noda, Kazunari Inoue, M. Kuroiwa et al. · IEEE Journal of Solid-State Circuits · 2005 · 104 citations

Engineering, Vlsi Design, Small Cell Size +17

HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

Y. Oritsuki, Masahiro Yokomichi, Takahiro Kajiwara et al. · IEEE Transactions on Electron Devices · 2010 · 53 citations

Device Modeling, Mosfet Channel, Electrical Engineering +13

The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs

Hans Jürgen Mattausch, M. Miyake, T. Iizuka et al. · IEEE Transactions on Electron Devices · 2012 · 52 citations

Device Modeling, Internal Node Potential, Electrical Engineering +12