Development of single-ion implantation — controllability of implanted ion number

Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

Tomohisa Mizuno, J. Okumtura, Akira Toriumi · IEEE Transactions on Electron Devices · 1994 · 569 citations

Device Modeling, Electrical Engineering, Semiconductor Device +14

Electron emission from molybdenum under ion bombardment

J. Ferrón, E. Vereda Alonso, R. A. Baragiola et al. · Journal of Physics D Applied Physics · 1981 · 64 citations

Inert Gas, Clean Molybdenum Surfaces, Engineering +10

Liquid metal alloy ion sources for B, Sb, and Si

K. Gamo, Takeshi Ukegawa, Y. Inomoto et al. · Journal of Vacuum Science and Technology · 1981 · 63 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Long-lifetime, reliable liquid metal ion sources for boron, arsenic, and phosphorus

William M. Clark, R. L. Seliger, M. Utlaut et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 30 citations

Materials Science, Inorganic Chemistry, Chemical Engineering +12

Development of boron liquid–metal–ion source

T. Ishitani, K. Umemura, Shigeyuki Hosoki et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 22 citations

Materials Engineering, Materials Science, Chemical Engineering +13