M. Koh

Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

M. Koh, Wataru Mizubayashi, Kunihiko Iwamoto et al. · IEEE Transactions on Electron Devices · 2001 · 84 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Fundamental limit of gate oxide thickness scaling in advanced MOSFETs

M. Hirose, M. Koh, Wataru Mizubayashi et al. · Semiconductor Science and Technology · 2000 · 42 citations

Device Modeling, Electrical Engineering, Tunnel Resistance +14

Development of single-ion implantation — controllability of implanted ion number

Takashi Matsukawa, T. Fukai, Shinsuke Suzuki et al. · Applied Surface Science · 1997 · 38 citations

Ion Implantation, Engineering, Bioelectronics +6

New Process for Si Nanopyramid Array (NPA) Fabrication by Ion-Beam Irradiation and Wet Etching

M. Koh, S. Sawara, Tomomi Goto et al. · Japanese Journal of Applied Physics · 2000 · 35 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +24

Simple nanostructuring on silicon surface by means of focused beam patterning and wet etching

M. Koh, S. Sawara, Tetsuro Shinada et al. · Applied Surface Science · 2000 · 23 citations

Materials Science, Engineering, Beam Lithography +14