M. Hirose - Concepedia

Author

M. Hirose

Hiroshima University ORCID

Also Known As

Hirose, M., Hirose, Masato, M Hirose, M. HIROSE, M. Hirose, MASATO HIROSE, Masato HIROSE, Masato Hirose

231

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

Hiroshima University Hokkaido University

About

M. Hirose is an author at Hiroshima University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	66	2.7K
2	Applied Physics	29	60	2.4K
3	Natural Sciences	7	7	172
4	Biology	5	5	96
5	Medicine	2	2	64

M. Hirose

Publications

2.9K

Citations

H-Index

Page 1

	Year	Citations
The valence band alignment at ultrathin SiO2/Si interfaces J. L. Alay, M. Hirose Journal of Applied Physics Materials ScienceSemiconductorsOxide HeterostructuresEngineeringWet Sio2/si	1997	162
Electronic density of states in discharge-produced amorphous silicon M. Hirose, T. Suzuki, G. H. Döhler Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	1979	140
Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition Seiichi Miyazaki, Yasuo Hamamoto, Eiji Yoshida, Thin Solid Films Materials ScienceEngineeringNanometer Silicon DotsNanomaterialsNanotechnology	2000	131
Low-temperature crystallization of doped <i>a</i>-Si:H alloys Toshihiko Hamasaki, Hiroyuki Kurata, M. Hirose, Applied Physics Letters Optical MaterialsEngineeringLow-temperature CrystallizationChemistrySih Band	1980	129
Physically-based threshold voltage determination for MOSFET's of all gate lengths M. Tsuno, Masato Suga, M. Tanaka, IEEE Transactions on Electron Devices Device ModelingV/sub Th/ ValuesElectrical EngineeringCircuit AnalysisEngineering	1999	123
Resonant tunneling through a self-assembled Si quantum dot M. Fukuda, K. Nakagawa, Seiichi Miyazaki, Applied Physics Letters Materials ScienceNegative ConductanceEngineeringQuantum ComputingPhysics	1997	99
Characterization of plasma-deposited microcrystalline silicon Y. Mishima, Seiichi Miyazaki, M. Hirose, Philosophical Magazine B Materials ScienceSilane PlasmaEngineeringPhysicsMicrofabrication	1982	99
Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current M. Koh, Wataru Mizubayashi, Kunihiko Iwamoto, IEEE Transactions on Electron Devices Electrical EngineeringSemiconductor DeviceEngineeringTunneling MicroscopyPhysics	2001	84
Analytic model of direct tunnel current through ultrathin gate oxides Khairurrijal Khairurrijal, Wataru Mizubayashi, Seiichi Miyazaki, Journal of Applied Physics Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2000	81
Electronic properties of chemically deposited polycrystalline silicon M. Hirose, M. Taniguchi, Y. Osaka Journal of Applied Physics Materials SciencePhotoluminescenceEngineeringPhysicsOptical Absorption Tails	1979	75

Page 1