Eiji Yoshida

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

Eiji Yoshida, Tetsu Tanaka · IEEE Transactions on Electron Devices · 2006 · 158 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17

Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition

Seiichi Miyazaki, Yasuo Hamamoto, Eiji Yoshida et al. · Thin Solid Films · 2000 · 131 citations

Natural Sciences, Materials Engineering, Materials Science +16

Distributed Implementation of Full Configuration Interaction for One Trillion Determinants

Hong Gao, Satoshi Imamura, Akihiko Kasagi et al. · Journal of Chemical Theory and Computation · 2024 · 52 citations · Full text

Computing, Chemistry, Computer Science +17

A 1.95 GHz Fully Integrated Envelope Elimination and Restoration CMOS Power Amplifier Using Timing Alignment Technique for WCDMA and LTE

Kazuaki Oishi, Eiji Yoshida, Yasufumi Sakai et al. · IEEE Journal of Solid-State Circuits · 2014 · 44 citations

Engineering, Electrical Engineering, Analog Electronics +14

A design of a capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for low-power and high-speed embedded memory

Eiji Yoshida, Tetsu Tanaka · 2004 · 40 citations

Engineering, Computer Engineering, Electrical Engineering +17