Eiji Yoshida

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

Eiji Yoshida, Tetsu Tanaka · IEEE Transactions on Electron Devices · 2006 · 155 citations

Hardware Security, Capacitorless One-transistor, Electrical Engineering +12

Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition

Seiichi Miyazaki, Yasuo Hamamoto, Eiji Yoshida et al. · Thin Solid Films · 2000 · 131 citations

Materials Science, Engineering, Nanometer Silicon Dots +10

Distributed Implementation of Full Configuration Interaction for One Trillion Determinants

Hong Gao, Satoshi Imamura, Akihiko Kasagi et al. · Journal of Chemical Theory and Computation · 2024 · 45 citations · Full text

A 1.95 GHz Fully Integrated Envelope Elimination and Restoration CMOS Power Amplifier Using Timing Alignment Technique for WCDMA and LTE

Kazuaki Oishi, Eiji Yoshida, Yasufumi Sakai et al. · IEEE Journal of Solid-State Circuits · 2014 · 44 citations

Electrical Engineering, Engineering, Radio Frequency +9

A design of a capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for low-power and high-speed embedded memory

Eiji Yoshida, Tetsu Tanaka · 2004 · 40 citations

Non-volatile Memory, Electrical Engineering, Engineering +10