M. Tsuno

Physically-based threshold voltage determination for MOSFET's of all gate lengths

M. Tsuno, Masato Suga, M. Tanaka et al. · IEEE Transactions on Electron Devices · 1999 · 123 citations

Device Modeling, V/sub Th/ Values, Electrical Engineering +9

Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

M. Koh, Wataru Mizubayashi, Kunihiko Iwamoto et al. · IEEE Transactions on Electron Devices · 2001 · 84 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Moderate kink effect in fully depleted thin-filmSOI MOSFETs

F. Balestra, Takuji Matsumoto, M. Tsuno et al. · Electronics Letters · 1995 · 17 citations

New experimental findings on hot carrier effects in sub-0.1 μm MOSFET's

F. Balestra, Takuma Matsumoto, M. Tsuno et al. · IEEE Electron Device Letters · 1995 · 14 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Impact ionization phenomenon in 0.1 μm MOSFET at low temperature and low voltage

Mitsumasa Koyanagi, Takuma Matsumoto, M. Tsuno et al. · 2002 · 14 citations

Device Modeling, Electrical Engineering, μM Mosfet +13