Wataru Mizubayashi

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Kunihiko Iwamoto, Yuuichi Kamimuta, Arito Ogawa et al. · Applied Physics Letters · 2008 · 159 citations

Dipole Formation, Electrical Engineering, Engineering +15

Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

M. Koh, Wataru Mizubayashi, Kunihiko Iwamoto et al. · IEEE Transactions on Electron Devices · 2001 · 84 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Analytic model of direct tunnel current through ultrathin gate oxides

Khairurrijal Khairurrijal, Wataru Mizubayashi, Seiichi Miyazaki et al. · Journal of Applied Physics · 2000 · 81 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

Analysis of Tunnel Current through Ultrathin Gate Oxides

M. Fukuda, Wataru Mizubayashi, Atsushi Kohno et al. · Japanese Journal of Applied Physics · 1998 · 62 citations

Sio 2, Electrical Engineering, Engineering +12

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

Yukinori Morita, Takahiro Mori, Shinji Migita et al. · IEEE Electron Device Letters · 2014 · 61 citations

Device Modeling, Electrical Engineering, Performance Enhancement +12