Arito Ogawa

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Kunihiko Iwamoto, Yuuichi Kamimuta, Arito Ogawa et al. · Applied Physics Letters · 2008 · 162 citations

Engineering, Electrical Engineering, Materials Science +17

Comprehensive Study of V<inf>FB</inf> Shift in High-k CMOS - Dipole Formation, Fermi-level Pinning and Oxygen Vacancy Effect

Y. Kamimuta, Kunihiko Iwamoto, Y.Nunoshige Y.Nunoshige et al. · 2007 · 54 citations

Engineering, Electrical Engineering, Physics +13

0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate

Arito Ogawa, Kunihiko Iwamoto, Hiroyuki Ota et al. · Microelectronic Engineering · 2007 · 32 citations

Engineering, Materials Engineering, Materials Science +14

Re-examination of Flat-Band Voltage Shift for High-k MOS Devices

Kunihiko Iwamoto, Arito Ogawa, Y. Kamimuta et al. · 2007 · 31 citations

Engineering, Electrical Engineering, Materials Science +11

5.1: Development of In‐Plane EPD

E. Kishi, Yoshinori Matsuda, Yutaka Uno et al. · SID Symposium Digest of Technical Papers · 2000 · 26 citations

Natural Sciences, Materials Engineering, Electrochemistry +5