Y. Kamimuta

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Koyama, A. Kaneko, Tsunehiro Ino et al. · 2003 · 77 citations

Engineering, Thermal Characteristics, Silicon On Insulator +18

Comprehensive Study of V<inf>FB</inf> Shift in High-k CMOS - Dipole Formation, Fermi-level Pinning and Oxygen Vacancy Effect

Y. Kamimuta, Kunihiko Iwamoto, Y.Nunoshige Y.Nunoshige et al. · 2007 · 52 citations

Engineering, Fermi-level Pinning, Semiconductor Device +17

Design and demonstration of very high-k (k∼50) HfO<inf>2</inf> for ultra-scaled Si CMOS

Shinji Migita, Yasushi Watanabe, Hiroyuki Ota et al. · 2008 · 31 citations

Engineering, Vlsi Design, Integrated Circuits +22

Re-examination of Flat-Band Voltage Shift for High-k MOS Devices

Kunihiko Iwamoto, Arito Ogawa, Y. Kamimuta et al. · 2007 · 31 citations

Gate/high-k Interface, Electrical Engineering, Engineering +11

High-performance tri-gate poly-Ge junction-less p- and n-MOSFETs fabricated by flash lamp annealing process

Koji Usuda, Y. Kamata, Y. Kamimuta et al. · 2014 · 29 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15