High-performance tri-gate poly-Ge junction-less p- and n-MOSFETs fabricated by flash lamp annealing process

Abstract

In order to realize high-performance stacking CMOS on insulator layers for 3D-LSIs, a technique for fabricating high-quality poly-crystalline Ge (poly-Ge) MOSFETs is mandatory. We employed the flash lamp annealing (FLA) method to grow high-quality poly-Ge by crystallization after melting an amorphous Ge layer. The Hall effect mobility of the p- and n-type poly-Ge film attained by the method was as high as 200 and 140 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs. Tri-gate junction-less (JL) p- and nMOSFETs were successfully fabricated on the poly-Ge channels without channel doping. The p- and nMOSFET exhibited high drive currents of up to 311 and 119 μA/μm which were comparable to that of L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> = 60 nm node c-Si pMOSFET, and the record value of poly-Si nMOSFET, respectively.