Physically-based threshold voltage determination for MOSFET's of all gate lengths

Abstract

A reliable method to determine the threshold voltage V/sub th/ for MOSFETs with gate length down to the sub-0.1 /spl mu/m region is proposed. The method determines V/sub th/ by linear extrapolation of the transconductance g/sub m/ to zero and is therefore named "GMLE method". To understand the physical meaning of the method and to prove its reliability for different technologies 2-D simulation was applied. The results reveal that determined V/sub th/ values always meet the threshold condition, i.e., the onset of inversion layer buildup.