J. L. Alay

The valence band alignment at ultrathin SiO2/Si interfaces

J. L. Alay, M. Hirose · Journal of Applied Physics · 1997 · 162 citations · Full text

Materials Science, Semiconductors, Oxide Heterostructures +11

Correlation between XPS, Raman and TEM measurements and the gas sensitivity of Pt and Pd doped SnO 2 based gas sensors

J.P. Kappler, Nicolae Bârsan, Udo Weimar et al. · Fresenius Journal of Analytical Chemistry · 1998 · 128 citations

Tem Measurements, Engineering, Natural Sciences +10

Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides

Takeshi Yoshida, D. Imafuku, J. L. Alay et al. · Japanese Journal of Applied Physics · 1995 · 62 citations

Oxide Heterostructures, Sio 2, Electrical Engineering +14

Influence of oxygen on the formation of ripples on Si

Kathy Elst, Wilfried Vandervorst, J. L. Alay et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 54 citations

Materials Science, Surface Characterization, Afm Pictures +15

Parameter optimisation in SnO2 gas sensors for NO2 detection with low cross-sensitivity to CO: sol–gel preparation, film preparation, powder calcination, doping and grinding

Á. Diéguez, A. Romano‐Rodrı́guez, J. L. Alay et al. · Sensors and Actuators B Chemical · 2000 · 47 citations

Materials Science, Chemical Engineering, Engineering +12