J. L. Alay - Concepedia

Author

J. L. Alay

Universitat de Barcelona

Also Known As

J Alay, J. Alay, J. L. Alay, J.L Alay, J.L. Alay, Josep L. ALAY, Josep L. Alay, Josep Lluis Alay

Publications

718

Citations

H-Index

Concepts

All Affiliations

Universitat de Barcelona IMEC Hiroshima University Centre National de la Recherche Scientifique Laboratoire d'Analyse et d'Architecture des Systèmes

About

J. L. Alay is an author at Universitat de Barcelona specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	643
2	Applied Physics	10	11	568
3	Chemical Engineering	5	5	158
4	Chemistry	5	5	228
5	Natural Sciences	1	1	128

J. L. Alay

Publications

643

Citations

H-Index

Page 1

	Year	Citations
The valence band alignment at ultrathin SiO2/Si interfaces J. L. Alay, M. Hirose Journal of Applied Physics Materials ScienceSemiconductorsOxide HeterostructuresEngineeringWet Sio2/si	1997	162
Correlation between XPS, Raman and TEM measurements and the gas sensitivity of Pt and Pd doped SnO 2 based gas sensors J.P. Kappler, Nicolae Bârsan, Udo Weimar, Fresenius Journal of Analytical Chemistry Tem MeasurementsEngineeringNatural SciencesSpectroscopyGas Sensor	1998	128
Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides Takeshi Yoshida, D. Imafuku, J. L. Alay, Japanese Journal of Applied Physics Oxide HeterostructuresSio 2Electrical EngineeringSemiconductor TechnologyEngineering	1995	62
Influence of oxygen on the formation of ripples on Si Kathy Elst, Wilfried Vandervorst, J. L. Alay, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceSurface CharacterizationAfm PicturesEngineeringPhysics	1993	54
Parameter optimisation in SnO2 gas sensors for NO2 detection with low cross-sensitivity to CO: sol–gel preparation, film preparation, powder calcination, doping and grinding Á. Diéguez, A. Romano‐Rodrı́guez, J. L. Alay, Sensors and Actuators B Chemical Materials ScienceChemical EngineeringEngineeringSensorsGas Sensor	2000	47
Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia Pierre Temple‐Boyer, Laurent Jalabert, L. Masarotto, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductors	2000	46
Determination of Valence Band Alignment at Ultrathin SiO<sub>2</sub>/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy J. L. Alay, M. Fukuda, C. H. Björkman, Japanese Journal of Applied Physics Materials ScienceOxide HeterostructuresEngineeringCrystalline DefectsOxide Electronics	1995	30
Properties of SiOxNy films deposited by LPCVD from SiH4/N2O/NH3 gaseous mixture P. Temple‐Boyer, Bekkay Hajji, J. L. Alay, Sensors and Actuators A Physical Materials EngineeringMaterials ScienceChemical EngineeringSih4/n2o/nh3 Gaseous MixtureEngineering	1999	28
RBS, AES and XPS analysis of ion beam induced nitridation of Si and SiGe alloys W. De Coster, Bert Brijs, H. Bender, Vacuum Materials EngineeringIon ImplantationEngineeringSige AlloysPhysics	1994	22
XPS analysis of ion‐beam‐induced oxidation of silicon substrates J. L. Alay, Wilfried Vandervorst Surface and Interface Analysis Chemical EngineeringIon ImplantationEngineeringCrystalline DefectsXps Analysis	1992	22

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