Electronic density of states in discharge-produced amorphous silicon

Abstract

The localized state density distribution in the mobility gap of glow-discharge amorphous silicon has been determined from capacitance-voltage characteristics for metal/oxide/amorphous silicon (MOS) structures. This new method provides a smooth distribution of localized states throughout the mobility gap. The density of states increases from a minimum of the order of 1016 cm−3 eV−1 near midgap to more than 1018–1019 cm−3 eV−1 within 0.2 eV of the band edges.