Takuya Saraya

Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate

Hiroki Ishikuro, T. Fujii, Takuya Saraya et al. · Applied Physics Letters · 1996 · 182 citations

Semiconductors, Room Temperature, Electrical Engineering +14

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

Fei Mo, Yusaku Tagawa, Chengji Jin et al. · IEEE Journal of the Electron Devices Society · 2020 · 133 citations · Full text

Ultrathin Igzo Channel, Non-volatile Memory, Engineering +16

Ferroelectric HfO₂ Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process

Masaharu Kobayashi, Yusaku Tagawa, Fei Mo et al. · IEEE Journal of the Electron Devices Society · 2018 · 115 citations · Full text

Engineering, Emerging Memory Technology, Ferroelectric Random-access Memory +17

Experimental Demonstration of Ferroelectric HfO₂ FET with Ultrathin-body IGZO for High-Density and Low-Power Memory Application

Fei Mo, Yusaku Tagawa, Chengji Jin et al. · 2019 · 71 citations

Magnetic Properties, Engineering, Ferroelectric Random-access Memory +16

Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

Toshiro Hiramoto, Makoto Suzuki, Xiaowei Song et al. · IEEE Transactions on Electron Devices · 2011 · 70 citations

Electrical Engineering, Engineering, Vlsi Design +14